Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell

In recent years, graphene has received so much attention because of its superlative properties and potential to revolutionize electronics, especially in VLSI. This study analyzes the effect single-event upset (SEU) an SRAM cell, which employs a metal-oxide semiconductor type nano-ribbon field transistor (MOS-GNRFET) compares results with another cell designed using PTM 10 nm FinFET node. Our simulations show that there is change data stored after heavy ion strike. However, it recovers from radiation effects 0.46 ns for GNRFET 0.51 FinFET. Since degradation observed Q Qb are 2.7X 2.16X as compared nano-MOSFET, we can conclude less robust single upset. addition, stability improved by increasing supply voltage VDD.